| 发明名称 | Manufacturing method of solid-state image sensor | ||
| 摘要 | A single crystal silicon layer is formed on a principal surface of a first wafer by epitaxial growth. A silicon oxide layer is formed on the single crystal silicon layer. Next, a defect layer is formed inside the single crystal silicon layer by ion implantation, and then, the second wafer is bonded to the silicon oxide layer on the first wafer. After that, an SOI wafer including the silicon oxide layer formed on the second wafer and the single crystal silicon layer formed on the silicon oxide layer is formed by separating the first wafer including the single crystal silicon layer from the second wafer including the single crystal silicon layer in the defect layer. Then, a photodiode is formed in the single crystal silicon layer. An interconnect layer is formed on a surface of the single crystal silicon layer which is opposite to the silicon oxide layer. | ||
| 申请公布号 | US9018031(B2) | 申请公布日期 | 2015.04.28 |
| 申请号 | US201314061750 | 申请日期 | 2013.10.23 |
| 申请人 | Panasonic Intellectual Property Management Co., Ltd. | 发明人 | Tsukamoto Akira |
| 分类号 | H01L31/18;H01L27/146 | 主分类号 | H01L31/18 |
| 代理机构 | McDermott Will & Emery LLP | 代理人 | McDermott Will & Emery LLP |
| 主权项 | 1. A manufacturing method of a solid-state image sensor comprising: forming a first single crystal silicon layer on a principal surface of a first wafer by epitaxial growth; forming a silicon oxide layer on the first single crystal silicon layer; forming a defect layer inside the first single crystal silicon layer by ion implantation; bonding a second wafer to the silicon oxide layer on the first wafer; forming an SOI wafer including the silicon oxide layer formed on the second wafer and the first single crystal silicon layer formed on the silicon oxide layer by separating the first wafer including the first single crystal silicon layer from the second wafer including the first single crystal silicon layer in the defect layer; forming a second single crystal silicon layer on the first single crystal silicon layer by epitaxial growth; forming a photodiode in the first single crystal silicon layer or the second single crystal silicon layer; and forming an interconnect layer including a photodiode charge read-out structure on a surface of the second single crystal silicon layer which is opposite to the first single crystal silicon layer. | ||
| 地址 | Osaka JP | ||