Apparatuses and methods for atomic layer deposition

摘要

Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.

主权项

1. A method for depositing a material on a substrate, comprising:
exposing a substrate sequentially to a titanium precursor gas and a nitrogen plasma to form a titanium nitride material on the substrate during an atomic layer deposition process within a deposition chamber, wherein the titanium precursor gas comprises tetrakis(dimethylamido) titanium, the nitrogen plasma is generated from a remote plasma system, and the atomic layer deposition process comprises:
flowing the titanium precursor gas into an annular channel within an inlet manifold assembly, wherein the annular channel surrounds a centralized channel, the centralized channel extends through the inlet manifold assembly, and a chamber lid assembly comprising the inlet manifold assembly is coupled with a chamber body forming the deposition chamber;flowing the titanium precursor gas from the annular channel into the centralized channel via a plurality of injection holes which extend from the annular channel through a sidewall of the centralized channel, and to the centralized channel;flowing the titanium precursor gas through the centralized channel, through a showerhead assembly attached with the chamber lid assembly, and absorbing a layer of the tetrakis(dimethylamido) titanium on the substrate;generating the nitrogen plasma by igniting a process gas comprising nitrogen (N2) with the remote plasma system;flowing the nitrogen plasma through the centralized channel, through the showerhead assembly, and towards the substrate; andexposing the layer of the tetrakis(dimethylamido) titanium to the nitrogen plasma to form the titanium nitride material on the substrate.