PREPARATION METHOD OF SINGLE CRYSTAL SILICON COMPONET WITH IMPROVED DURABILITY FOR PLASMA APPRATUS

摘要

The present invention relates to a preparation method of single crystal silicon component with improved durability for plasma apparatus. By using single crystal silicon crystal grown in [111] direction when manufacturing single crystal silicon component, usage life and persisting period are prolonged compared with component employing single crystal silicon crystal grown in [100] direction when used by being mounted to a plasma apparatus, component replacement cycle is enlarged which can reduce maintenance and repair cost of the plasma apparatus and consumption of component, and process yield may be increased since impurity is not generated when processed for use in a shape of silicon ring or silicone electrode plate within the plasma apparatus.