Microstructure device comprising a face to face electromagnetic near field coupling between stacked device portions and method of forming the device

摘要

A galvanic-isolated coupling of circuit portions is accomplished on the basis of a stacked chip configuration. The semiconductor chips thus can be fabricated on the basis of any appropriate process technology, thereby incorporating one or more coupling elements, such as primary or secondary coils of a micro transformer, wherein the final characteristics of the micro transformer are adjusted during the wafer bond process.

主权项

1. A semiconductor device comprising:
a first chip including:
a first substrate;a first semiconductor layer on the first substrate;a first circuit portion formed in and above said first semiconductor layer; anda first through hole via extending through said first substrate and connecting a rear side of said first substrate with said first circuit portion; a second chip attached to said first chip to form a stacked configuration, the second chip including:
a second substrate;a second semiconductor layer on the second substrate;a second circuit portion formed in and above said second semiconductor layer; anda second though hole via extending through said second substrate and connecting a rear side of said second substrate with said second circuit portion, said first and second circuit portions being positioned to implement an electromagnetic near field coupling mechanism to each others; and a first plurality of isolation regions formed in said first substrate and a second plurality of isolation regions formed in said second substrate, wherein said first and second pluralities of isolation regions are configured and arranged to reduce eddy currents in said first and second substrates, the isolation regions of said first plurality extend radially outwardly from the first through hole via, and the isolation regions of said second plurality extend radially outwardly from the second through hole via.