发明名称 Non-volatile memory for anti-cloning and authentication method for the same
摘要 A method and a non-volatile memory apparatus for cloning prevention is provided. The non-volatile memory apparatus includes an Enhanced Media Identification (EMID) area, which is located in a specific area of the non-volatile memory, and stores an identification for identifying the non-volatile memory; and an EMID encoder for modifying the identification by a preset operation in conjunction with an arbitrary value, wherein the EMID area includes a first area in which reading by an external device is prevented, and a second area in which reading from the non-volatile memory by the external device is permitted in response to a read command.
申请公布号 US9021603(B2) 申请公布日期 2015.04.28
申请号 US201314043306 申请日期 2013.10.01
申请人 Samsung Electronics Co., Ltd 发明人 Kang Bo-Gyeong;Ko Jung-Wan;Lee Byung-Rae
分类号 H04L9/32;G06F21/62;G06F12/14;G06F21/10;G06F21/73;G11B20/00 主分类号 H04L9/32
代理机构 The Farrell Law Firm, P.C. 代理人 The Farrell Law Firm, P.C.
主权项 1. A memory device comprising: an Enhanced Media Identifier (EMID) area including a data element uniquely identifying the memory device; and an EMID encoder configured to: read the data element from the EMID area; encode the data element using at least one value received from a host device; and send authentication information including the encoded data element to the host device, wherein the EMID area includes a first area in which reading by the host device is prevented, and further includes a second area in which reading by the host device is permitted.
地址 KR