Light emitting diode having electrode pads

摘要

A substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

主权项

1. A light emitting diode, comprising:
a first conductivity-type semiconductor layer; second conductivity-type semiconductor layers disposed on the first conductivity-type semiconductor layer and separated from each other; active layers respectively disposed between the first conductivity-type semiconductor layer and each of the second conductivity-type semiconductor layers and separated from each other; an insulation layer covering portions of side surfaces of the second conductivity-type semiconductor layers and comprising openings, each opening partially exposing an upper surface of a corresponding second conductivity-type semiconductor layer; a first electrode pad electrically connected to the first conductivity-type semiconductor layer; a first extension connected to the first electrode pad and contacting the first conductivity-type semiconductor layer between the second conductivity-type semiconductor layers, the first extension comprising a contact portion elongated along a first direction; a second electrode pad electrically connected to the second conductivity-type semiconductor layers through the openings; and mesas each comprising a portion of the first conductivity-type semiconductor layer, one of the second conductivity-type semiconductor layers, and one of the active layers, wherein the second electrode pad comprises a portion disposed on the insulation layer between the second conductivity-type semiconductor layers, and wherein a side surface of one of the mesas is inclined.