GaN LEDs with improved area and method for making the same

摘要

Enlightening device and method for making the same are disclosed. Individual light emitting devices such as LEDs are separated to form individual dies by process in which a first narrow trench cuts the light emitting portion of the device and a second trench cuts the substrate to which the light emitting portion is attached. The first trench can be less than 10 μm. Hence, a semiconductor area that would normally be devoted to dicing streets on the wafer is substantially reduced thereby increasing the yield of devices. The devices generated by this method can also include base members that are electrically conducting as well as heat conducting in which the base member is directly bonded to the light emitting layers thereby providing improved heat conduction.

主权项

1. A device comprising:
a structure including a first semiconductor layer, a second semiconductor layer, a light emitting layer formed between said first semiconductor layer and said second semiconductor layer, and a reflective layer formed on a first surface of said second semiconductor layer that is opposite to a second surface in contact with said active layer, a first edge defining a lateral size of said structure; and a base member including a substrate and a bonding layer formed on said substrate, said structure formed in contact with said bonding layer, a second edge defining a lateral size of said base member, wherein a lateral size of said reflective layer is substantially equal to a lateral size of said active layer, and said first edge at said reflective layer and said second edge at said bonding layer are formed having a difference in level so that a lateral size of said bonding layer is smaller than said lateral size of said reflective layer by at least said difference in level between said first edge at said reflective layer and said second edge at said bonding layer.