| 发明名称 | Methods of providing photolithography patterns using feature parameters | ||
| 摘要 | A method of providing a photolithography pattern can be provided by identifying at least one weak feature from among a plurality of features included in a photolithography pattern based on a feature parameter that is compared to a predetermined identification threshold value for the feature parameter. A first region of the weak feature can be classified as a first dosage region and a second region of the weak feature can be classified as a second dosage region. Related methods and apparatus are also disclosed. | ||
| 申请公布号 | US9017904(B2) | 申请公布日期 | 2015.04.28 |
| 申请号 | US201313950708 | 申请日期 | 2013.07.25 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Choi Jin;Oh Heung-Suk;Park Sin-jeung;Yi Rae-won |
| 分类号 | G03F7/00;H01L21/308;G06F17/50;G03F1/00;H01L21/027 | 主分类号 | G03F7/00 |
| 代理机构 | Myers Bigel Sibley & Sajovec, P.A. | 代理人 | Myers Bigel Sibley & Sajovec, P.A. |
| 主权项 | 1. A method of providing a photolithography pattern, the method comprising: at least one of the following operations are carried out by a computer; identifying at least one weak feature from among a plurality of features included in a photolithography pattern based on a feature parameter compared to a predetermined identification threshold value for the feature parameter; and classifying a first region of the weak feature as a first dosage region and a second region of the weak feature as a second dosage region, wherein classifying the first region of the weak feature as the first dosage region and the second region of the weak feature as the second dosage region is based on the feature parameter compared to a predetermined classification threshold value for the feature parameter. | ||
| 地址 | KR | ||