Method of manufacturing a semiconductor device including alignment mark

摘要

A method of manufacturing a semiconductor device includes: forming a recessed portion in a semiconductor substrate; forming an insulating film in the recessed portion; after forming the insulating film, forming a silicide layer on the semiconductor substrate in contact with the insulating film; and performing alignment between an electron beam exposure apparatus and the semiconductor substrate by using the insulating film and the silicide layer as an alignment mark.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming a first recessed portion in a first region between a plurality of chip regions on a semiconductor substrate; forming a first insulating film in the first recessed portion; after forming the first insulating film, forming a first silicide layer directly on the semiconductor substrate in the first region, the first silicide layer being in contact with the first insulating film; and performing alignment between an electron beam exposure apparatus and the semiconductor substrate by using the first insulating film and the first silicide layer as an alignment mark, wherein the forming the first silicide layer includes: forming a metal film over the semiconductor substrate and the first insulating film; and forming the first silicide layer directly on the semiconductor substrate by heating the metal film; and removing the metal film on the first insulating film, and the performing alignment between the electron beam exposure apparatus and the semiconductor substrate is performed in such a way that the electron beam exposure apparatus scans an electron beam over the alignment mark and thereby detects a boundary where the first silicide layer is in contact with the first insulating film.