Method for forming diffusion regions in a silicon substrate

摘要

A method of manufacturing solar cells is disclosed. The method comprises depositing an etch-resistant dopant material on a silicon substrate, the etch-resistant dopant material comprising a dopant source, forming a cross-linked matrix in the etch-resistant dopant material using a non-thermal cure of the etch-resistant dopant material, and heating the silicon substrate and the etch-resistant dopant material to a temperature sufficient to cause the dopant source to diffuse into the silicon substrate.

主权项

1. A method of manufacturing solar cells, the method comprising:
forming a thin dielectric layer on a surface of a silicon substrate; forming a polysilicon layer over the thin dielectric layer; depositing, in liquid phase, an etch-resistant dopant material comprising a dopant source material and a solvent on the polysilicon layer; forming a cross-linked matrix in the etch-resistant dopant material using a non-thermal cure of the etch-resistant dopant material, the cross-linked matrix having a structure, and the non-thermal cure causing a phase change of the etch-resistant dopant material from liquid to solid; subsequently, removing the solvent from the etch-resistant dopant material without altering the structure of the cross-linked matrix; and heating the etch-resistant dopant material to a temperature wherein the dopant source material diffuses into the polysilicon layer.