Verfahren und Vorrichtung zum Herstellen von einkristallinen, insbesondere duennen halbleitenden Schichten

摘要

Monocrystalline layers of silicon are formed on a carrier body of tantalum, ceramic or quartz by the thermal decomposition of a gaseous compound of silicon such as silicon chloroform or silicon tetrachloride, a monocrystalline seed of silicon being positioned on the carrier so that the crystallographic axis along which crystal growth takes place most rapidly lies parallel to the carrier surface. The silicon is deposited in the form of narrow strips either by mounting the carrier in a chamber containing the gaseous compound and moving a heating element along the carrier or by directing a jet of the gaseous compound on to the heated carrier and moving the jet along the carrier.