发明名称 THIN FIM TRANSISTOR ARRAY SUBSTRATE FOR DISPLAY DEVICE AND METHOD FABRICATING THE SAME
摘要 <p>The present invention relates to an array substrate for a display device and a manufacturing method thereof. The disclosed invention includes a thin film transistor which includes a gate electrode which is formed on a flexible substrate, a gate insulation pattern which is formed on a part of the flexible substrate including the gate electrode, an active layer pattern which is formed on the gate insulation pattern on the gate electrode, an etch stop layer pattern which is formed on the active layer pattern, and source and drain electrodes which are formed on the etch stop layer, the active layer pattern, and the gate insulation pattern, and has a structure of an island shape, a passivation layer which is formed on the front side of the flexible substrate including the thin film transistor, exposes the drain electrode, and is made of organic materials, and a conductive layer pattern which is formed on the passivation layer and is electrically connected to the drain electrode.</p>
申请公布号 KR20150044747(A) 申请公布日期 2015.04.27
申请号 KR20130124181 申请日期 2013.10.17
申请人 发明人
分类号 H01L29/786;H01L51/52 主分类号 H01L29/786
代理机构 代理人
主权项
地址