| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an ion million method and an ion milling device capable of forming a processing region having a desired shape more surely.SOLUTION: An ion milling method in connection with one embodiment includes: a placement step for placing a processed substrate 14 on a substrate holder 30 in a processing chamber 16; and an ion milling step for generating plasma 38 on the processed substrate in the processing chamber, milling the processed substrate while making a first ion I1 in the plasma incident substantially perpendicularly on the main surface 14a of the processed substrate, and making a second ion constituting an ion beam incident obliquely on the processed substrate to mill the processed substrate while passing the plasma through an ion beam B supplied from an ion beam supply part 12 to the processing chamber.</p> |
