| 摘要 |
The present invention relates to a semiconductor light emitting device comprising: a light emitting structure in which a first conductivity type semiconductor layer, an active layer, and a second first conductivity type semiconductor layer are sequentially arranged in layers; and a first and a second electrode electrically connected with the first and the second conductivity type semiconductor layer respectively. The second electrode comprises: a current blocking layer formed on one area of upper surfaces of the second conductivity type semiconductor layer; a reflection layer formed on the current blocking layer; a transparent electrode layer arranged to be separated with the reflection layer, having an opening which surrounds the reflection layer, and formed on the second conductivity type semiconductor layer; a pad electrode unit covering the reflection layer, formed to be separated with the transparent electrode layer, and formed in an area of the current blocking layer; and at least one finger electrode unit enlarged from the pad electrode unit to one direction, where at least a part is formed on the transparent electrode layer. Accordingly, light extraction efficiency of the semiconductor light emitting device is improved. |
