| 摘要 |
PROBLEM TO BE SOLVED: To provide a reflective mask which reduces reflection of out-of-band light, and a reflective mask blank, and a method for manufacturing the mask blank.SOLUTION: A reflective mask 101 with reduced reflection of out-of-band light is provided, in which an antireflection layer 12 is disposed on a light-shielding frame 11 formed in a mask region corresponding to a boundary region of a chip to be subjected to multiple exposure on a semiconductor substrate, wherein the antireflection layer 12 reflects on the surface thereof, out-of-band light reflected by a back surface conductive film 5 and a surface of a substrate 1 and gives an inverse phase to the light. As for a problem of charge-up in a pattern region of a conventional mask with a light-shielding zone when the mask is observed with an electron microscope, the reflective mask of the present invention can suppress charge-up in a pattern region induced in a light-shielding zone, since the antireflection layer 12 has a conductivity of 1×10/m&OHgr; or more. |
