PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

摘要

PROBLEM TO BE SOLVED: To properly perform plasma processing by rectifying a process gas in a plasma processing apparatus.SOLUTION: A plasma apparatus 1 includes: a processing container 10 housing a wafer W; a mounting table 20 provided on the bottom surface of the processing container 10 and mounting the wafer W; a first process-gas supply pipe 60 provided at the center of a ceiling surface of the processing container 10 and supplying a first process gas T1 to the inside of the processing container 10; a second process-gas supply pipe 70 provided on a side surface of the processing container 10 and supplying a second process gas T2 to the inside of the processing container 10; a rectifying-gas supply pipe 80 provided on the side surface of the processing container 10 and above the second process-gas supply pipe 70, and supplying a rectifying gas R directed downward inside the processing container 10; and a radial line slot antenna 40 radiating a microwave to the inside of the processing container 10.