| 摘要 |
An integrated circuit device includes a semiconductor substrate, insulation regions extending into the semiconductor substrate, and a semiconductor fin protruding above the insulation regions. The insulation regions include a first portion and a second portion on opposite sides of the semiconductor fin. The integrated circuit device further includes a gate stack on a top surface and sidewalls of the semiconductor fin, and a semiconductor region connected to an end of the semiconductor fin. The semiconductor region includes a first semiconductor region formed of a first semiconductor material, wherein the first semiconductor region comprises faceted top surface, and a second semiconductor region underlying the first semiconductor region. The second semiconductor region has a higher germanium concentration than that of the first semiconductor region. A fin spacer is on a sidewall of the second semiconductor region, wherein the fin spacer overlaps a portion of the insulation regions. |
