| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that allows reducing on-resistance.SOLUTION: A semiconductor device includes: a collector electrode; a first-conductivity-type collector layer provided on the collector electrode; a second-conductivity-type first base layer provided on the collector layer; a first-conductivity-type second base layer provided on the first base layer; a first-conductivity-type floating layer provided on the first base layer and electrically insulated; a gate electrode provided between the first base layer and the second base layer via an insulating film; a first conductor provided between the first base layer and the gate electrode and between the floating layer and the gate electrode via the insulating film; a second-conductivity-type emitter layer selectively provided in a surface of the second base layer; and an emitter electrode provided above and on the second base layer and the emitter layer. |
