| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor device that allows preventing a leakage current flowing between a source and a drain, and to provide a method of manufacturing the same.SOLUTION: A compound semiconductor device includes: a superlattice buffer layer 101 composed of a first AlGaN layer 101a having a first Al composition and a second AlGaN layer 101b being thinner than the first AlGaN layer 101a and having a second Al composition higher than the first Al composition; a channel layer 102 formed above the superlattice buffer layer 101; a carrier supply layer 103 formed on the channel layer 102; a gate electrode 104 formed on the carrier supply layer 103; and a source electrode 105 and a drain electrode 106. The compound semiconductor device further includes a third AlGaN layer 107, between the superlattice buffer layer 101 and the channel layer 102, being thicker than the second AlGaN layer 101b and having a third Al composition higher than the first Al composition. The first Al composition is greater than or equal to 0 to less than 1, and the second Al composition and the third Al composition are greater than 0 to less than or equal to 1. |
