| 摘要 |
Provided is a method to form a transistor device and a nanowire electric field effect transistor (FET) device. A device layer is formed to include a source area and a drain area. The source area and the drain area are connected by a floating type nanowire channel. Etching stop layers are formed under the source area and the drain area. The etching stop layers include support structures interposed between a semiconductor substrate and the source and drain areas. The floating type nanowire channel is formed by etching a sacrificial material put under the floating type nanowire channel. The etching is selective about the sacrificial material in order to prevent a removal of the etching stop layers put under the source area and the drain area. |
