| 摘要 |
<p>A thin film transistor, according to the present invention, comprises a gate electrode formed on a substrate; an active layer formed on the gate electrode; a source and a drain electrode which are connected to a fixed region of the active layer; a first protection membrane formed on the source and drain electrode, including a first contact hole to expose the drain electrode partially; a first electrode patterned on the first protection membrane; a second protection membrane which has a second contact hole and which is overlapped with the first contact hole on the first protection membrane, having the first electrode to expose the drain electrode partially; a light blocking membrane formed on the second protection membrane and connected to the drain electrode through the second contact hole; a third protection membrane having a third contact hole, overlapped with the second contact hole on the second protection membrane having the light blocking membrane to expose the light blocking membrane partially; and a second electrode formed on the third protection membrane and connected to the drain electrode through the light blocking membrane. Therefore, problems of light leakage phenomenon due to the inner light of a back light unit or the outer light through a black matrix slit can be improved.</p> |
