Integrated Circuit Devices Having Through Silicon Via Structures and Methods of Manufacturing the Same

摘要

An integrated circuit device is provided. The integrated circuit device includes: a capacitor including an electrode formed in a first area on a substrate; a through-silicon-via (TSV) landing pad formed in a second area on the substrate, the TSV landing pad including the same material as the electrode; a multi-layered interconnection structure formed on the capacitor and the TSV landing pad; and a TSV structure passing through the substrate, the TSV structure being connected to the multi-layered interconnection structure through the TSV landing pad.

主权项

1. An integrated circuit device comprising:
a capacitor comprising an electrode on a substrate; a through-silicon-via (TSV) landing pad on the substrate, the TSV landing pad comprising the same material as the electrode; a multi-layered interconnection structure on the TSV landing pad; and a TSV structure passing through the substrate, the TSV structure being connected to the multi-layered interconnection structure through the TSV landing pad.