发明名称 AQUEOUS CLEANING TECHNIQUES AND COMPOSITIONS FOR USE IN SEMICONDUCTOR DEVICE MANUFACTURE
摘要 Some embodiments relate to a manufacturing method for a semiconductor device. In this method, a semiconductor workpiece, which includes a metal gate electrode thereon, is provided. An opening is formed in the semiconductor workpiece to expose a surface of the metal gate. Formation of the opening leaves a polymeric residue on the workpiece. To remove the polymeric residue from the workpiece, a cleaning solution that includes an organic alkali component is used. Other embodiments related to a semiconductor device resulting from the method.
申请公布号 US2015108578(A1) 申请公布日期 2015.04.23
申请号 US201414578746 申请日期 2014.12.22
申请人 Taiwan Semiconductor Manufacturing Co., Ltd. 发明人 Chou Chun-Li;Ku Shao-Yen;Chen Pei-Hung;Chuang Jui-Ping
分类号 H01L27/088;H01L29/78;H01L27/092;H01L29/06 主分类号 H01L27/088
代理机构 代理人
主权项 1. A semiconductor device comprising: a substrate having a first source/drain region laterally spaced from a second source/drain region on opposing sides of a channel region; a gate arranged over the channel region and having a top surface free of dishing; a first dielectric layer arranged over the first and second source/drain regions and having a top surface approximately coplanar with a top surface of the gate; a second dielectric layer arranged over the first dielectric layer and the gate; a conductive contact extending through the first and second dielectric layers to the first source/drain region and ohmically coupled to the first source/drain region.
地址 Hsin-Chu TW