发明名称 |
AQUEOUS CLEANING TECHNIQUES AND COMPOSITIONS FOR USE IN SEMICONDUCTOR DEVICE MANUFACTURE |
摘要 |
Some embodiments relate to a manufacturing method for a semiconductor device. In this method, a semiconductor workpiece, which includes a metal gate electrode thereon, is provided. An opening is formed in the semiconductor workpiece to expose a surface of the metal gate. Formation of the opening leaves a polymeric residue on the workpiece. To remove the polymeric residue from the workpiece, a cleaning solution that includes an organic alkali component is used. Other embodiments related to a semiconductor device resulting from the method. |
申请公布号 |
US2015108578(A1) |
申请公布日期 |
2015.04.23 |
申请号 |
US201414578746 |
申请日期 |
2014.12.22 |
申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
Chou Chun-Li;Ku Shao-Yen;Chen Pei-Hung;Chuang Jui-Ping |
分类号 |
H01L27/088;H01L29/78;H01L27/092;H01L29/06 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a substrate having a first source/drain region laterally spaced from a second source/drain region on opposing sides of a channel region; a gate arranged over the channel region and having a top surface free of dishing; a first dielectric layer arranged over the first and second source/drain regions and having a top surface approximately coplanar with a top surface of the gate; a second dielectric layer arranged over the first dielectric layer and the gate; a conductive contact extending through the first and second dielectric layers to the first source/drain region and ohmically coupled to the first source/drain region. |
地址 |
Hsin-Chu TW |