SEMICONDUCTOR STRUCTURE WITH HIGH ENERGY DOPANT IMPLANTATION

摘要

A semiconductor device has an epitaxial layer grown over a substrate, each having a first dopant type. A structure disposed within the epitaxial layer has multiple trenches, each of which has a gate and a source electrode disposed within a shield oxide matrix. Multiple mesas each isolate a pair of the trenches from each other. A body region with a second dopant type is disposed above the epitaxial layer and bridges each of the mesas. A region of elevated concentration of the first dopant type is implanted at a high energy level between the epitaxial layer and the body region, which reduces resistance spreading into a channel of the device. A source region having the first dopant type is disposed above the body region.

主权项

1. A semiconductor device, comprising:
an epitaxial layer grown over a semiconductor substrate, each comprising a first type of dopant; a structure disposed within the epitaxial layer, the structure comprising:
a plurality of trenches, each of the trenches comprising a gate electrode and a source electrode disposed within a shield oxide matrix; anda plurality of mesas, each of which isolates a first of the plurality of trenches from a second of the plurality of trenches; a body region bridging each of the plurality of mesas, wherein the body region is disposed above the epitaxial layer and comprises a second type of dopant; a region of elevated concentration of the first type of dopant, which is implanted between the epitaxial layer and the body region; and a source region comprising the first type of dopant and disposed above the body region.