| 发明名称 |
TRANSISTOR AND METHOD OF OPERATING SAME |
| 摘要 |
A transistor includes a channel forming layer on a substrate, a gate on the channel forming layer and including an electrochemically indifferent metal, a solid electrolyte layer between the channel forming layer and the gate, the solid electrolyte layer is formed as a stack structure with the gate on the channel forming layer, an active metal layer including an electrochemically active metal capable of enabling channel switching by using an oxidation-reduction reaction of the electrochemically active metal so that the active metal layer forms a metal channel in a channel region between the channel forming layer and the solid electrolyte layer, and a source and a drain electrically connected to the active metal layer. |
| 申请公布号 |
US2015109048(A1) |
申请公布日期 |
2015.04.23 |
| 申请号 |
US201414521868 |
申请日期 |
2014.10.23 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
YANG Woo-young;KIM Ki-hong;CHOI Sang-jun;KIM Young-eal;PARK Seong-yong |
| 分类号 |
H01L29/10;H03K17/687;H01L29/45;H01L29/80;H01L29/24 |
主分类号 |
H01L29/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A transistor comprising:
a channel forming layer on a substrate; a gate on the channel forming layer, the gate including an electrochemically indifferent metal; a solid electrolyte layer between the channel forming layer and the gate, the solid electrolyte layer is formed as a stack structure with the gate on the channel forming layer; an active metal layer including an electrochemically active metal and capable of enabling channel switching by using an oxidation-reduction reaction of the electrochemically active metal so that the active metal layer forms a metal channel in a channel region between the channel forming layer and the solid electrolyte layer; and a source and a drain electrically connected to the active metal layer. |
| 地址 |
Suwon-Si KR |
