| 摘要 |
Provided in the present invention is a method for manufacturing a thin-film transistor, where the thin-film transistor is a bottom-gate coplanar structure, comprising the following steps: step 1, a substrate (20) is provided; step 2, a gate electrode (22) is formed on the substrate (20); step 3, a gate electrode insulation layer (24) is formed on the gate electrode (22) and the substrate (20); step 4, a source/drain electrode (26) is formed on the gate electrode insulation layer (24) and a photosensitive material layer (27) is covered on the source/drain electrode (26); step 5, the surface of the gate electrode insulation layer (24) is subjected to a plasma treatment; step 6, the photosensitive material layer (27) on the source/drain electrode (26) is removed; and, step 7, an oxide semiconductor layer (28) is formed on the source/drain electrode (26) and the gate electrode insulation layer (24), and the oxide semiconductor layer (28) is patterned. The present invention, by subjecting the surface of the gate electrode insulation layer to the plasma treatment, repairs a defect in the interface between the gate electrode insulation layer and the oxide semiconductor layer, thus improving electrical properties of the thin-film transistor. |
