BONDED WAFER MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a bonded wafer manufacturing method which makes it possible to clean, in a cleaning line of a strict management level, the bonded wafer on which a peeled surface with remaining damages by ion implantation is exposed.SOLUTION: In a bonded wafer manufacturing method which comprises a step of forming a bonded wafer having a thin film on a base wafer by an ion implantation peeling method and a step of performing thickness decreasing processing of the thin film, the step of performing thickness decreasing processing includes a stage of performing decreasing thickness processing of the thin film by a sacrificial oxidation treatment or by gas phase etching. The bonded wafer manufacturing method comprises a cleaning step of cleaning the bonded wafer on which a peeled surface is exposed on a surface just before the step of performing thickness decreasing processing of the thin film. The cleaning step includes a stage of performing wet cleaning of cleaning the bonded wafer by sequentially immersing the bonded wafer in a plurality of washing tanks, in which the wet cleaning is performed in all of the washing tanks for the wet cleaning without applying ultrasonic waves.