| 摘要 |
A group-III nitride semiconductor device and a manufacturing method therefor. The group-III nitride semiconductor device comprises a nitride semiconductor layer and a passivation layer which grow on a substrate, and also comprises a source electrode, a drain electrode and a gate electrode between the source electrode and the drain electrode, wherein the nitride semiconductor layer comprises a nitride nucleation layer, a nitride buffer layer, a nitride channel layer and a nitride barrier layer. The passivation layer is etched to expose the nitride barrier layer in a gate electrode area, so that a groove is formed at the gate electrode. A compound dielectric layer, comprising a combination structure of a nitride dielectric layer, a nitrogen-oxide dielectric layer and an oxide dielectric layer which are formed in sequence in the direction of the substrate, is adopted between the nitride barrier layer and a gate electrode metal layer. The compound dielectric layer will not cause an increase in the interface state density. Compared with the traditional group-III nitride semiconductor device with a single oxide dielectric layer, the effects of electric leakage and current collapse of the semiconductor device can be reduced at the same time. |
