| 摘要 |
<p>In an electronic device including a semiconductor memory, the semiconductor memory includes a unit storage cell which includes a variable resistance element whose resistance value is changed according to a current flowing on both ends thereof and a selection element which is connected to one end of the variable resistance element, a unit current generating unit which generates the current flowing on both ends thereof using a prescribed voltage according to a polarity of current data in comparison with existing data, and a pad which receives the prescribed voltage from the outside and measures the current flowing on both ends thereof in the outside.</p> |
