Hydrogen Surface-Treated Graphene, Formation Method Thereof and Electronic Device Comprising The Same

摘要

The present invention relates to hydrogen surface-treated graphene, a formation method thereof, and an electronic device including the same. The graphene according to one exemplary embodiment of the present invention can be useful in preparing hydrogen surface-treated graphene having a band gap using simple methods through indirect hydrogen plasma treatment. Also, the graphene according to one exemplary embodiment of the present invention can be useful in forming two regions having different band gaps through the indirect hydrogen plasma treatment, and thus can be useful in reducing the processing time and the processing cost since the graphene is directly applicable to electronic devices such as transistors, and touch panels.

主权项

1. Hydrogen surface-treated graphene having a band gap of 0.1 to 5.5 eV and satisfying the following Mathematical Expression 1:
10≦ID/ID′  [Mathematical Expression 1] wherein ID represents an intensity of a peak present in a region of Raman shift of 1,350±5 cm−1, and ID′ represents an intensity of a peak present in a region of Raman shift of 1,620±5 cm−1, as measured after irradiation with a 514 nm laser.