| 发明名称 |
IV-VI AND III-V QUANTUM DOT STRUCTURES IN A V-VI MATRIX |
| 摘要 |
A thermoelectric material and methods of manufacturing thereof are disclosed. In general, the thermoelectric material comprises a Group V-VI host, or matrix, material and Group III-V or Group IV-VI nanoinclusions within the Group V-VI host material. By incorporating the Group III-V or Group IV-VI nanoinclusions into the Group V-VI host material, the performance of the thermoelectric material can be improved. |
| 申请公布号 |
US2015107640(A1) |
申请公布日期 |
2015.04.23 |
| 申请号 |
US201414517345 |
申请日期 |
2014.10.17 |
| 申请人 |
Phononic Devices, Inc. |
发明人 |
Caylor James Christopher;Wellenius Ian Patrick;Charles William O.;Cantu Pablo;Gray Allen L. |
| 分类号 |
H01L35/16;H01L35/34;H01L35/18 |
主分类号 |
H01L35/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thermoelectric material comprising:
a Group V-VI host material; and nanoinclusions within the Group V-VI host material, the nanoinclusions comprising one of a group consisting of: Group III-V nanoinclusions and Group IV-VI nanoinclusions. |
| 地址 |
Durham NC US |
