发明名称 |
SELF ALIGNED CONTACT FORMATION |
摘要 |
The present disclosure relates to methods of forming a self-aligned contact and related apparatus. In some embodiments, the method forms a plurality of gate lines interspersed between a plurality of dielectric lines, wherein the gate lines and the dielectric lines extend in a first direction over an active area. One or more of the plurality of gate lines are into a plurality of gate line sections aligned in the first direction. One or more of the plurality of dielectric lines are cut into a plurality of dielectric lines sections aligned in the first direction. A dummy isolation material is deposited between adjacent dielectric sections in the first direction and between adjacent gate line sections in the first direction. One or more self-aligned metal contacts are then formed by replacing a part of one or more of the plurality of dielectric lines over the active area with a contact metal. |
申请公布号 |
US2015108651(A1) |
申请公布日期 |
2015.04.23 |
申请号 |
US201414583864 |
申请日期 |
2014.12.29 |
申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
Chen Neng-Kuo;Yu Shao-Ming;Huang Gin-Chen;Hsu Chia-Jung;Sun Sey-Ping;Wann Clement Hsingjen |
分类号 |
H01L23/528;H01L23/532;H01L29/49;H01L27/088 |
主分类号 |
H01L23/528 |
代理机构 |
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代理人 |
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主权项 |
1. An integrated chip, comprising:
a plurality of gate lines extending in a first row over one or more active areas; a first dummy isolation material disposed in the first row between adjacent ones of the plurality of gate lines; a plurality of self-aligned contacts disposed in a second row, which is parallel with and adjacent to the first row, at positions over the one or more active areas; and a second dummy isolation material disposed in the second row between adjacent ones of the plurality of self-aligned contacts. |
地址 |
Hsin-Chu TW |