METHOD FOR THINNING, METALIZING, AND DICING A SEMICONDUCTOR WAFER, AND SEMICONDUCTOR DEVICE MADE USING THE METHOD

摘要

There is provided a method of fabricating a semiconductor device, method including: a) forming semiconductor elements in plural element regions surrounded by assumed dicing lines on a first principal surface of a semiconductor wafer; b) grinding the second principal surface in such a way that an outer peripheral portion of a second principal surface on the opposite side of the first principal surface of the semiconductor wafer becomes thicker than an inner peripheral portion of the second principal surface; c) forming a metal film, in such a way as to avoid sections corresponding to the dicing lines, on the second principal surface that has been ground in the grinding step; and d) cutting the semiconductor wafer from the second principal surface side along portions where the metal film is not formed on the dicing lines.

主权项

1. A semiconductor device comprising:
a semiconductor substrate having a first principal surface and a second principal surface opposing the first principal surface, the first principal surface including a first region and a second region surrounding the first region; a semiconductor element formed in the first region; a dicing line formed in the second region; and a conductive film formed on the second principal surface at a location corresponding to the first region.