SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

摘要

A semiconductor structure and a method for forming the same are provided. The method includes following steps. A gate electrode layer is formed on a substrate. A spacer structure is formed on a sidewall of the gate electrode layer. A dielectric cap film is formed to cover the gate electrode layer and the spacer structure. A source/drain implantation is performed to the substrate with the dielectric cap film exposed to a condition of the source/drain implantation.

主权项

1. A method for forming a semiconductor structure, comprising:
forming a gate electrode layer on a substrate; forming a spacer structure on a sidewall of the gate electrode layer; forming a dielectric cap film to cover the gate electrode layer and the spacer structure; and performing a source/drain implantation to the substrate with the dielectric cap film exposed to a condition of the source/drain implantation.