SEMICONDUCTOR DEVICE

摘要

A manufacturing method for a semiconductor device includes providing a substrate having at least agate structure formed thereon and a first spacer formed on sidewalls of the gate structure, performing an ion implantation to implant dopants into the substrate, forming a disposal spacer having at least a carbon-containing layer on the sidewalls of the gate structure, the carbon-containing layer contacting the first spacer, and performing a thermal treatment to form a protecting layer between the carbon-containing layer and the first spacer.

主权项

1. A semiconductor device comprising:
a gate structure; a first spacer positioned on sidewalls of the gate structure; a second spacer positioned on the first spacer; a SiCN-based protecting layer formed between the first spacer and the second spacer; and epitaxial layers respectively positioned at two sides of the second spacer.