| 发明名称 |
HEAT DISSIPATION SUBSTRATE AND METHOD FOR PRODUCING SAME |
| 摘要 |
The present invention relates to a heat dissipation substrate, which is a composite substrate composed of two layers, and which is characterized in that a surface layer (first layer) (1) is configured of single crystal silicon and a handle substrate (second layer) (2) is configured of a material that has a higher thermal conductivity than the first layer. A heat dissipation substrate of the present invention has high heat dissipation properties. |
| 申请公布号 |
US2015108502(A1) |
申请公布日期 |
2015.04.23 |
| 申请号 |
US201314398555 |
申请日期 |
2013.05.07 |
| 申请人 |
Shin-Etsu Chemical Co., Ltd. |
发明人 |
Akiyama Shoji;Kubota Yoshihiro;Kawai Makoto |
| 分类号 |
H01L23/373;H01L29/20;H01L21/18;H01L29/16 |
主分类号 |
H01L23/373 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A heat dissipating substrate which is a composite substrate consisting of two layers, wherein a surface layer (first layer) is composed of single crystal silicon and a handle substrate (second layer) is composed of a material having a higher thermal conductivity than the first layer. |
| 地址 |
Tokyo JP |
