| 发明名称 |
Integrated Circuit Resistor |
| 摘要 |
A method of fabricating a semiconductor device is disclosed. The method includes providing a substrate including an isolation region, forming a resistor over the isolation region, and forming a contact over the resistor. The method also includes implanting with a dopant concentration that is step-increased at a depth of the resistor and that remains substantially constant as depth increases. |
| 申请公布号 |
US2015111361(A1) |
申请公布日期 |
2015.04.23 |
| 申请号 |
US201414586013 |
申请日期 |
2014.12.30 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Wong King-Yuen;Lin Chia-Pin;Lu Chia-Yu;Tsai Yi-Cheng;Lin Da-Wen;Yu Kuo-Feng |
| 分类号 |
H01L49/02;H01L21/265;H01L21/8234;H01L21/02 |
主分类号 |
H01L49/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a semiconductor device, the method comprising:
providing a substrate including an isolation region; forming a resistor over the isolation region; implanting the resistor with an inverse box-like dopant profile; planarizing the resistor; and forming a contact over the resistor. |
| 地址 |
Hsin-Chu TW |
