| 发明名称 |
DISPLAY DEVICE |
| 摘要 |
According to one embodiment, a display device includes an underlying insulation layer formed on a surface of a resin layer, and a thin-film transistor formed above the surface of the resin layer via the underlying insulation layer. The underlying insulation layer includes a three-layer multilayer structure of a first silicon oxide film, a silicon nitride film formed above the first silicon oxide film, and a second silicon oxide film formed above the silicon nitride film. |
| 申请公布号 |
US2015108488(A1) |
申请公布日期 |
2015.04.23 |
| 申请号 |
US201414513653 |
申请日期 |
2014.10.14 |
| 申请人 |
Japan Display Inc. |
发明人 |
HIRAMATSU Masato;KAWATA Yasushi;ISHIDA Arichika |
| 分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A display device comprising:
an underlying insulation layer formed on a surface of a resin layer; and a thin-film transistor formed above the surface of the resin layer via the underlying insulation layer, wherein the underlying insulation layer includes a three-layer multilayer structure of a first silicon oxide film, a silicon nitride film formed above the first silicon oxide film, and a second silicon oxide film formed above the silicon nitride film. |
| 地址 |
Minato-ku JP |
