| 摘要 |
<p>A method for forming a pattern of a semiconductor device according to the embodiment of the present invention includes the steps of: successively forming a first mask layer and a second mask layer on a substrate; forming a second mask pattern layer by patterning the second mask layer; forming a first mask pattern layer with a negative inclined region whose width is reduced from a boundary with the second mask pattern layer to the substrate by etching the first mask layer exposed by the second mask pattern layer; and forming a thin film layer on the substrate exposed by the first mask pattern layer.</p> |
