| 摘要 |
<p>PROBLEM TO BE SOLVED: To achieve a semiconductor device which forms a structure as represented by a gate electrode in a comparatively simple constitution and has high reliability.SOLUTION: A semiconductor device comprises a compound semiconductor layer 2, a gate electrode 8 formed on the compound semiconductor layer 2, a source electrode 4 and a drain electrode 5 which are formed on the compound semiconductor layer 2 and on both sides of the gate electrode 8, and a pair of projections 7a, 7b which are formed above the compound semiconductor layer 2 and on both sides of the gate electrode 8.</p> |
