CHALCOGENIDE-CONTAINING FILM FORMING COMPOSITIONS AND VAPOR DEPOSITION OF CHALCOGENIDE-CONTAINING FILMS

摘要

Disclosed are Chalcogenide-containing film forming compositions, methods of synthesizing the same, and methods of forming Chalcogenide-containing films on one or more substrates via vapor deposition processes using the Chalcogenide-containing film forming compositions.

主权项

1. A method of forming a chalcogenide-containing film, the method comprising introducing into a reactor having a substrate therein a vapor of a chalcogenide-containing film forming precursor having one of the following formulae:
((R1R2R3)E)M(E(R4R5R6))   (I) ((R1R2)N)2M   (II) (RO)2M   (III) wherein, M is S, Se, or Te; E is Si or Ge; and each R is independently selected from H, a linear or branched C1-C6 alkyl, C1-C6 alkoxy, C1-C6 alkylsilyl, C1-C6 alkygermyl, C1-C6 perfluorocarbon, C1-C6 alkylsiloxy, C1-C6 alkylamino, alkylsilylamino, or aminoamido group; and depositing at least part of the chalcogenide-containing film forming precursor onto the substrate.