发明名称 HIGH FREQUENCY PSEUDO DUAL PORT MEMORY
摘要 A pseudo dual port (PDP) memory is disclosed having a write driver that selectively precharges only one of a bit line and a complement bit line in a bit line pair responsive to a bit value to be written into an accessed bitcell while discharging a remaining one of the bit line and the complement bit line. In this fashion, the cleanup time between a read operation and a write operation during a read/write clock cycle is advantageously reduced.
申请公布号 US2015109865(A1) 申请公布日期 2015.04.23
申请号 US201314061528 申请日期 2013.10.23
申请人 QUALCOMM Incorporated 发明人 Gulati Chirag;Holla Vakwadi Lakshmikantha;Yoon Sei-Seung
分类号 G11C7/12 主分类号 G11C7/12
代理机构 代理人
主权项 1. A method for accessing a bitcell of a pseudo dual port (PDP) memory, comprising: asserting a word line voltage during a read portion of a memory clock cycle to couple a bitcell to a bit line and a complement bit line for a bit line pair; de-asserting the word line voltage for a write precharge portion of the memory clock cycle; and during the write precharge portion of the memory clock cycle, selectively precharging to a power supply voltage VDD only one of a the bit line and the complement bit line in a the bit line pair while discharging a remaining one of the bit line and the complement bit line, the selective precharging and discharging being responsive to a bit value to be written into the bitcell; coupling the selectively precharged and discharged bit line pair to the bitcell to write the bit value into the bitcell during a read/write clock cycle.
地址 San Diego CA US
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