发明名称 |
HIGH FREQUENCY PSEUDO DUAL PORT MEMORY |
摘要 |
A pseudo dual port (PDP) memory is disclosed having a write driver that selectively precharges only one of a bit line and a complement bit line in a bit line pair responsive to a bit value to be written into an accessed bitcell while discharging a remaining one of the bit line and the complement bit line. In this fashion, the cleanup time between a read operation and a write operation during a read/write clock cycle is advantageously reduced. |
申请公布号 |
US2015109865(A1) |
申请公布日期 |
2015.04.23 |
申请号 |
US201314061528 |
申请日期 |
2013.10.23 |
申请人 |
QUALCOMM Incorporated |
发明人 |
Gulati Chirag;Holla Vakwadi Lakshmikantha;Yoon Sei-Seung |
分类号 |
G11C7/12 |
主分类号 |
G11C7/12 |
代理机构 |
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代理人 |
|
主权项 |
1. A method for accessing a bitcell of a pseudo dual port (PDP) memory, comprising:
asserting a word line voltage during a read portion of a memory clock cycle to couple a bitcell to a bit line and a complement bit line for a bit line pair; de-asserting the word line voltage for a write precharge portion of the memory clock cycle; and during the write precharge portion of the memory clock cycle, selectively precharging to a power supply voltage VDD only one of a the bit line and the complement bit line in a the bit line pair while discharging a remaining one of the bit line and the complement bit line, the selective precharging and discharging being responsive to a bit value to be written into the bitcell; coupling the selectively precharged and discharged bit line pair to the bitcell to write the bit value into the bitcell during a read/write clock cycle. |
地址 |
San Diego CA US |