METHOD OF FORMING HYBRID DIFFUSION BARRIER LAYER AND SEMICONDUCTOR DEVICE THEREOF

摘要

In a method of fabricating a semiconductor device, an opening is formed inside a dielectric layer above a semiconductor substrate. The opening has a wall. At least one diffusion barrier material is then formed over the wall of the opening by at least two alternating steps, which are selected from the group consisting of a process of physical vapor deposition (PVD) and a process of atomic layer deposition (ALD). A liner layer is formed over the at least one diffusion barrier material.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; a dielectric layer disposed over the semiconductor substrate; at least one diffusion barrier layer disposed over a wall of an opening in the dielectric layer, the at least one diffusion barrier layer comprising alternating layers of two materials; and a liner layer over the at least one diffusion barrier layer, wherein the at least one diffusion barrier layer comprises:
at least one layer comprising tantalum nitride (TaN), wherein the atomic ratio of tantalum (Ta) to nitrogen (N) is substantially 1:1, andat least a second layer comprising TaNx, wherein x is a number in the range of from 0.5 to 1.5, and being different from the at least one layering comprising tantalum nitride (TaN).