| 发明名称 |
TRANSISTOR AND METHOD FOR FORMING THE SAME |
| 摘要 |
A method for forming a transistor is provided. The method includes: forming a channel layer over a substrate; patterning the channel layer to form a recess; and forming a source layer in the recess, such that at least a portion of the channel layer protrudes to form the fin-type channel. |
| 申请公布号 |
US2015108550(A1) |
申请公布日期 |
2015.04.23 |
| 申请号 |
US201314055976 |
申请日期 |
2013.10.17 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
WANG CHIEN-HSUN;HUANG MAO-LIN;LIN CHUN-HSIUNG |
| 分类号 |
H01L29/66;H01L21/02;H01L29/78 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
Hsinchu TW |
