STRUCTURE FOR MEASURING DOPING REGION RESISTANCE AND METHOD OF MEASURING CRITICAL DIMENSION OF SPACER

摘要

A method of the measuring a critical dimension of a spacer is provided. The measurement is performed by using several test structures of measuring doping region resistance. Each of the test structure has different space disposed between a first gate line and a second gate line. By measuring a doping region resistance of each test structure, a plot of reciprocal of resistance versus space can be accomplished. Then, making regression of the plot, a correlation can be formed. Finally, a critical dimension of a spacer can be get by extrapolating the correlation back to 0 unit of reciprocal of resistance.

主权项

1. A structure for measuring doping region resistance, comprising:
a substrate; a first gate line disposed on the substrate; a second gate line disposed parallel and adjacent to the first gate line; a first spacer disposed one a sidewall of the first gate line; a second spacer opposing to the first spacer disposed on a sidewall of the second gate line; and a doping region disposed within the substrate between the first spacer and the second spacer, and the doping region extend continuously along the first gate line from a front end of the first gate line to a back end of the first gate line.