| 发明名称 |
Thin-film transistor and process for manufacture of the thin-film transistor |
| 摘要 |
A thin-film transistor includes an oxidic semiconductor channel, a metallic or oxidic gate, drain and source contacts and at least one barrier layer positioned between the oxidic semiconductor channel and the drain and source contacts to inhibit an exchange of oxygen between the oxidic semiconductor channel and the drain and source contacts. |
| 申请公布号 |
US2015108469(A1) |
申请公布日期 |
2015.04.23 |
| 申请号 |
US201414515579 |
申请日期 |
2014.10.16 |
| 申请人 |
UNIVERSITAET STUTTGART |
发明人 |
Herrmann Marcus;Fruehauf Norbert |
| 分类号 |
H01L29/786;H01L21/465;H01L27/12;H01L29/66;H01L21/321;H01L29/45;H01L21/467 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thin-film transistor, comprising:
an oxidic semiconductor channel; metallic or oxidic gate, drain and source contacts; and at least one barrier layer positioned between the oxidic semiconductor channel and the drain and source contacts to inhibit an exchange of oxygen between the oxidic semiconductor channel and the drain and source contacts. |
| 地址 |
STUTTGART DE |
