SURFACE TREATMENT IN A DEP-ETCH-DEP PROCESS

摘要

A method of forming semiconductor devices is provided. The method includes creating an opening in a semiconductor structure; depositing a first layer of metal inside the opening with the first layer of metal partially filling up the opening；modifying a top surface of the first layer of metal in an etching process; passivating the modified top surface of the first layer of metal to form a passivation layer; and depositing a second layer of metal directly on top of the passivation layer.