| 摘要 |
<p>The present invention provides a method of manufacturing a MOSFET, comprising: a. providing a substrate (100), a source/drain region (200), a pseudo-gate stack (150), an interlayer dielectric layer (300), and a sidewall (160); b. removing the pseudo-gate stack (150) to form a pseudo-gate vacancy; c. performing inclined ion injection on the semiconductor structure, and forming a carrier scattering region (400), the carrier scattering region (400) being located below a surface of the semiconductor structure on a side of a drain; and d. depositing a gate stack layer (500) in the pseudo-gate vacancy. According to the method for reducing a probability of hot carrier transition provided by the present invention, scattering impurities, that is, non-ionized impurities are injected in a channel material near a side of a drain, so that a probability that a hot carrier is scattered in a pinch-off region is increased, a carrier is subject to increased resistance in the movement in the pinch-off region, the energy of a hot carrier is reduced, and accordingly the quantity and probability of hot carriers that enter a gate dielectric layer are reduced.</p> |
