RESISTIVE RANDOM ACCESS MOMORY COMPRISING MULTI STACKED STRUCTURE, AND METHOD FOR FABRICATING THE SAME

摘要

The present invention relates to a resistive random access memory comprising a memory layer of a stacked structure, and a method for fabricating the same. A resistive random access memory according to an embodiment of the present invention includes a first electrode; a memory layer formed on the first electrode; and a second electrode formed on the memory layer. The memory layer includes a first memory layer and a second memory layer. The oxygen content of the first memory layer is different from that of the second memory layer.