| 摘要 |
PROBLEM TO BE SOLVED: To provide a gas sensor whose manufacturing process is simple, and provide the gas sensor whose manufacturing cost is suppressed.SOLUTION: A single process is provided for manufacturing a transistor which functions as a detection element of a gas sensor and in which an oxide semiconductor layer is in contact with gas, and a transistor which forms a detection circuit and in which the oxide semiconductor layer is in contact with a film with a gas barrier property, on the same surface. These transistors are used for manufacturing the gas sensor. |
